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Dominant Energy Carrier Transitions and Thermal Anisotropy in Epitaxial Iridium Thin Films

Authors
Perez, ChristopherJog, AtharvKwon, HeungdongGall, DanielAsheghi, MehdiKumar, SuhasPark, WoosungGoodson, Kenneth E.
Issue Date
Nov-2022
Publisher
WILEY-V C H VERLAG GMBH
Keywords
ballistic transport; electrical transport; electron-phonon; nanostructured metal; thermal transport
Citation
ADVANCED FUNCTIONAL MATERIALS, v.32, no.45, pp 1 - 9
Pages
9
Journal Title
ADVANCED FUNCTIONAL MATERIALS
Volume
32
Number
45
Start Page
1
End Page
9
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/152344
DOI
10.1002/adfm.202207781
ISSN
1616-301X
1616-3028
Abstract
High aspect ratio metal nanostructures are commonly found in a broad range of applications such as electronic compute structures and sensing. The self-heating and elevated temperatures in these structures, however, pose a significant bottleneck to both the reliability and clock frequencies of modern electronic devices. Any notable progress in energy efficiency and speed requires fundamental and tunable thermal transport mechanisms in nanostructured metals. In this work, time-domain thermoreflectance is used to expose cross-plane quasi-ballistic transport in epitaxially grown metallic Ir(001) interposed between Al and MgO(001). Thermal conductivities ranges from roughly 65 (96 in-plane) to 119 (122 in-plane) W m(-1) K-1 for 25.5-133.0 nm films, respectively. Further, low defects afforded by epitaxial growth are suspected to allow the observation of electron-phonon coupling effects in sub-20 nm metals with traditionally electron-mediated thermal transport. Via combined electro-thermal measurements and phenomenological modeling, the transition is revealed between three modes of cross-plane heat conduction across different thicknesses and an interplay among them: electron dominant, phonon dominant, and electron-phonon energy conversion dominant. The results substantiate unexplored modes of heat transport in nanostructured metals, the insights of which can be used to develop electro-thermal solutions for a host of modern microelectronic devices and sensing structures.
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