Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Kim Y.; Kim Y.; Chun B.; Kim D.; Hwang J.; Kim S.; Rhee J.; Kim T.

doi:10.1109/INTMAG.2006.375574

Detailed Information

Cited 0 time in webofscience

Cited 0 time in scopus

Metadata Downloads

Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Authors: Kim Y.; Kim Y.; Chun B.; Kim D.; Hwang J.; Kim S.; Rhee J.; Kim T.

Issue Date: Jun-2006

Citation: INTERMAG 2006 - IEEE International Magnetics Conference, pp 74

Journal Title: INTERMAG 2006 - IEEE International Magnetics Conference

Start Page: 74

URI: https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15423

DOI: 10.1109/INTMAG.2006.375574

ISSN: 2150-4598
2150-4601

Abstract: The bias voltage dependence of tunneling magnetoresistance (TMR) for double barrier magnetic tunnel junction (DMTJ) CoFe/NiFeSiB/CoFe is investigated. The microstructure of the hybrid free layered DMTJs was examined by HRTEM.

Files in This Item: Go to Link

Appears in Collections: ICT융합공학부 > 응용물리전공 > 1. Journal Articles

Show full item record

qrcode

Altmetrics

Total Views & Downloads

STATISTICS: Total View :6,491,820; Today View :0

RSS_1.0 RSS_2.0 ATOM_1.0

Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Altmetrics

Total Views & Downloads

BROWSE