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Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

Authors
Rhee, JRHwang, JYKim, SSKim, AYChun, BSYoo, ISOh, BSKim, YKKim, TWPark, WJ
Issue Date
Oct-2005
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
amorphous ferromagnet; CoFeSiB; magnetic random access memory (MRAM); switching field; synthetic antiferromagnet (SAF); tunneling magnetoresistance (TMR)
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp 2685 - 2687
Pages
3
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
41
Number
10
Start Page
2685
End Page
2687
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15472
DOI
10.1109/TMAG.2005.855296
ISSN
0018-9464
1941-0069
Abstract
Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization (M-s : 560 emu/cm(3)) and a higher anisotropy constant (K-u : 2 800 erg/cm(3)) than CoFe and NiFe, respectively. An exchange coupling energy (J(ex)) of -0.003 erg/cm(2) was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si-SiO2-Ta 45/Ru 9.5/IrMn10/CoFe 7/AIO(x)/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nanometers) MTJs structure, it was found that the size dependence of the switching field originated in the lower J(ex) using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity (H-c) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.
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