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Improved selectivity of synthetic anti-ferromagnetic, free layer in high-density MRAM array

Authors
Hwang, IJeong, WPark, JPark, WJJang, YMCho, YJHwang, SRhee, JKim, T
Issue Date
Oct-2005
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
magnetic tunnel junction; MRAM; remanence; SAF free layer; selectivity; vortex
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp 2673 - 2675
Pages
3
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
41
Number
10
Start Page
2673
End Page
2675
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15473
DOI
10.1109/TMAG.2005.855287
ISSN
0018-9464
1941-0069
Abstract
We investigate switching characteristics of the patterned submicrometer magnetic tunnel junction (MTJ) cells incorporating with a NiFe single and a synthetic anti-ferromagnetic (SAF) as a free layer. The MTJs with single NiFe free layer show the increased probability of vortex appearance with increase of NiFe thickness. Even though the free layer thickness is decreased, single NiFe free layer shows large variation of switching field. However, the employment of the SAF free layer dramatically improves switching characteristics with the suppression of vortex states and single domain-like tendency.
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