Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB
- Authors
- Hwang J.Y.; Kim S.S.; Rhee J.R.; Chun B.S.; You I.S.; Oh B.S.; Kim Y.K.; Kim T.; Park W.
- Issue Date
- Apr-2005
- Publisher
- IEEE
- Citation
- INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference, pp 1011
- Journal Title
- INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
- Start Page
- 1011
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/15777
- DOI
- 10.1109/INTMAG.2005.1464449
- ISSN
- 2150-4598
2150-4601
- Abstract
- Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization (M/sub s/:560 emu/cm/sup 3/) and a higher anisotropy constant (K/sub u/:2 800 erg/cm/sup 3/) than CoFe and NiFe, respectively. An exchange coupling energy (J/sub ex/) of -0.003 erg/cm/sup 2/ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si-SiO/sub 2/-Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO/sub x//CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nanometers) MTJs structure, it was found that the size dependence of the switching field originated in the lower J/sub ex/ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity (H/sub c/) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.
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