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Large tunneling magnetoresistance of a ramp-edge-type junction with a SrTiO3 barrier
- Authors
- Lee, S. S.; Rhie, K.; Hwang, D. G.; Kim, S. W.; Lee, K. H.; Rhee, J. R.; Shin, K.
- Issue Date
- May-2004
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- ramp-edge-type junction; tunneling magnetoresistance (TMR); SrTiO3 tunneling barrier; I-V characteristics
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272-276, no.SUPPL. 1, pp E1499 - E1500
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 272-276
- Number
- SUPPL. 1
- Start Page
- E1499
- End Page
- E1500
- ISSN
- 0304-8853
1873-4766
- Abstract
- The tunneling magnetoresistance (TMR) of a ramp-edge-type junction with SrTiO3 barrier layer was studied. Samples with a structure of glass/NiO(600 angstrom)/Co(100 angstrom)/SrTiO3(400 angstrom)/SrTiO3(20-100 angstrom)/NiFe(100 angstrom) were prepared by sputtering and etched through electron cyclotron argon ion milling. Nonlinear I - V characteristics were obtained from a ramp-type tunneling junction, with dominant difference between two external magnetic fields (+/- 100 Oe) perpendicular to the junction edge line. Given a 40-angstrom thick SrTiO3 barrier, the TMR was 52.7% at a bias voltage of - 50 mV. The bias voltage dependence of TMR in a ramp-type tunneling junction was similar to that of the layered TMR junction. (C) 2003 Elsevier B.V. All rights reserved.
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