Bottom IrMn-based spin valves by using oxygen surfactant
DC Field | Value | Language |
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dc.contributor.author | Hwang, JY | - |
dc.contributor.author | Kim, MY | - |
dc.contributor.author | Rhee, JR | - |
dc.contributor.author | Lee, SS | - |
dc.contributor.author | Hwang, DG | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Yu, SC | - |
dc.date.available | 2021-02-22T16:17:36Z | - |
dc.date.issued | 2003-05 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16190 | - |
dc.description.abstract | Bottom IrMn-based spin valves through exposure of part of the CoFe pinned layer to O-2 with the structure Ta30/NiFe20/IrMn70/CoFet/oxidation/CoFe(30-t)/Cu20/CoFe30/Ta35 (all thickness in angstroms) (oxidation indicates exposure to different O-2 flows) were deposited by dc magnetron sputtering on thermally oxidized Si (111) substrates. Within the range of O-2 flows (0.4-2.8 sccm) studied, the value of the magnetoresistance (MR) ratio is seen to be quite low at a relatively large t of >16 Angstrom and a exchange coupling field (H-ex) decreases when the O-2 exposed CoFe surface is too close to IrMn. Under optimal conditions, a MR ratio of 8.6% with H(ex)similar to275 Oe for the bottom single spin valve and a MR ratio 12.2% with H(ex)similar to268/220 Oe for the dual spin valve are obtained. X-ray reflectivity data show smoother interfaces for the spin valves subjected to O-2 exposure. The enhanced MR ratio coupled with the lower interlayer coupling field (H-int), sheet resistance, and magnetic moment of the specular spin valve can be attributed to an enhanced specularity as a result of smoother interfaces after O-2 exposure. (C) 2003 American Institute of Physics. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Bottom IrMn-based spin valves by using oxygen surfactant | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1063/1.1540163 | - |
dc.identifier.scopusid | 2-s2.0-0037641059 | - |
dc.identifier.wosid | 000182822600247 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.93, no.10, pp 8394 - 8396 | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 93 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 8394 | - |
dc.citation.endPage | 8396 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GIANT MAGNETORESISTANCE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | FILMS | - |
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