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Bottom IrMn-based spin valves by using oxygen surfactant

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dc.contributor.authorHwang, JY-
dc.contributor.authorKim, MY-
dc.contributor.authorRhee, JR-
dc.contributor.authorLee, SS-
dc.contributor.authorHwang, DG-
dc.contributor.authorKim, JK-
dc.contributor.authorLee, SH-
dc.contributor.authorYu, SC-
dc.date.available2021-02-22T16:17:36Z-
dc.date.created2020-09-01-
dc.date.issued2003-05-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16190-
dc.description.abstractBottom IrMn-based spin valves through exposure of part of the CoFe pinned layer to O-2 with the structure Ta30/NiFe20/IrMn70/CoFet/oxidation/CoFe(30-t)/Cu20/CoFe30/Ta35 (all thickness in angstroms) (oxidation indicates exposure to different O-2 flows) were deposited by dc magnetron sputtering on thermally oxidized Si (111) substrates. Within the range of O-2 flows (0.4-2.8 sccm) studied, the value of the magnetoresistance (MR) ratio is seen to be quite low at a relatively large t of >16 Angstrom and a exchange coupling field (H-ex) decreases when the O-2 exposed CoFe surface is too close to IrMn. Under optimal conditions, a MR ratio of 8.6% with H(ex)similar to275 Oe for the bottom single spin valve and a MR ratio 12.2% with H(ex)similar to268/220 Oe for the dual spin valve are obtained. X-ray reflectivity data show smoother interfaces for the spin valves subjected to O-2 exposure. The enhanced MR ratio coupled with the lower interlayer coupling field (H-int), sheet resistance, and magnetic moment of the specular spin valve can be attributed to an enhanced specularity as a result of smoother interfaces after O-2 exposure. (C) 2003 American Institute of Physics.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectGIANT MAGNETORESISTANCE-
dc.subjectENHANCEMENT-
dc.subjectFILMS-
dc.titleBottom IrMn-based spin valves by using oxygen surfactant-
dc.typeArticle-
dc.contributor.affiliatedAuthorRhee, JR-
dc.identifier.doi10.1063/1.1540163-
dc.identifier.scopusid2-s2.0-0037641059-
dc.identifier.wosid000182822600247-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.8394 - 8396-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume93-
dc.citation.number10-
dc.citation.startPage8394-
dc.citation.endPage8396-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusGIANT MAGNETORESISTANCE-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusFILMS-
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