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High bias voltage dependence in tunneling magnetoresistance of a ramp-type junction

Authors
Lee, SSKim, YIHwang, DGRhie, KKim, SWRhee, JR
Issue Date
15-May-2003
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.8047 - 8049
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
93
Number
10
Start Page
8047
End Page
8049
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16191
DOI
10.1063/1.1557339
ISSN
0021-8979
Abstract
A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)/NiO(60 nm)/barrier Si3N4(2-6 nm)/free NiFe(10 nm) with the 15degrees slope was investigated. We obtained nonlinear I-V characteristics for ramp-type tunneling junctions that are distinctively different with and without an applied magnetic field. In the barrier with a Si3N4 thickness of 4 nm, the bias voltage dependence of TMR was stable up to 10 V with a negative TMR ratio of about -10%. The negative TMR is very peculiar for an asymmetric tunneling process between a wedge Co pinned layer and a free NiFe layer. (C) 2003 American Institute of Physics.
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