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High bias voltage dependence in tunneling magnetoresistance of a ramp-type junction

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DC FieldValueLanguage
dc.contributor.authorLee, SS-
dc.contributor.authorKim, YI-
dc.contributor.authorHwang, DG-
dc.contributor.authorRhie, K-
dc.contributor.authorKim, SW-
dc.contributor.authorRhee, JR-
dc.date.available2021-02-22T16:17:37Z-
dc.date.created2020-09-01-
dc.date.issued2003-05-15-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16191-
dc.description.abstractA ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)/NiO(60 nm)/barrier Si3N4(2-6 nm)/free NiFe(10 nm) with the 15degrees slope was investigated. We obtained nonlinear I-V characteristics for ramp-type tunneling junctions that are distinctively different with and without an applied magnetic field. In the barrier with a Si3N4 thickness of 4 nm, the bias voltage dependence of TMR was stable up to 10 V with a negative TMR ratio of about -10%. The negative TMR is very peculiar for an asymmetric tunneling process between a wedge Co pinned layer and a free NiFe layer. (C) 2003 American Institute of Physics.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectSPIN-
dc.titleHigh bias voltage dependence in tunneling magnetoresistance of a ramp-type junction-
dc.typeArticle-
dc.contributor.affiliatedAuthorRhee, JR-
dc.identifier.doi10.1063/1.1557339-
dc.identifier.scopusid2-s2.0-0038048853-
dc.identifier.wosid000182822600136-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.8047 - 8049-
dc.relation.isPartOfJOURNAL OF APPLIED PHYSICS-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume93-
dc.citation.number10-
dc.citation.startPage8047-
dc.citation.endPage8049-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSPIN-
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