High exchange-coupling field and thermal stability of antiferromagnetic Ir-Mn pinned spin-valve films

Abstract

IrMn pinned spin-valve (SV) films with stacks of Ta-NiFe-IrMn-CoFe-Cu-CoFe-NiFe-Ta were prepared by dc sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. The annealing cycle number and temperature dependence of the exchange-coupling field (H-c), magnetoresistance (MR) ratio, and coercivity (H-c) were investigated. By optimizing the process of deposition and the post-thermal annealing condition, we obtained the TrMn-based SV films with MR ratio of 3.6%, H-ex of 1180 Oe for the pinned layer. The H-c is stabilized after the second annealing cycle, and it is thought that this SV reveals high thermal stability. The H-c maintained its strength of 600 Oe in operation up to 240 degreesC and decreased monotonically to zero at 270 degreesC.