Detailed Information
Cited 4 time in 
Cited 4 time in 
Cited 4 time in
Metadata Downloads
Junction area dependence of tunneling magnetoresistance
- Issue Date
- Feb-2002
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- spin dependent tunneling; natural oxidation; tunneling magnetoresistance; resistance-area products (R x A)
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.239, no.1-3, pp 129 - 131
- Pages
- 3
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 239
- Number
- 1-3
- Start Page
- 129
- End Page
- 131
- ISSN
- 0304-8853
1873-4766
- Abstract
- Spin dependent tunneling devices Ta/NiFe/Ta/NiFe/FeMn/NiFe/CoFe/Al2O3/CoFe/NiFe/Al with in-situ naturally oxidized Al2O3 barrier were fabricated using ion beam deposition and DC sputtering. The as-deposited and post-annealing junctions showed tunneling magneto resistance of 8-18% with resistance-area products (R x A) of 340-60 Omega mum(2), which were dependent on the junction area (81-4 mum(2)). (C) 2002 Elsevier Science B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ICT융합공학부 > 응용물리전공 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.