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Magnetoresistance in La0.8Sr0.2MnO3-delta biepitaxial grain boundary junction

Authors
Lee, SSHwang, DGPark, CMRhee, JR
Issue Date
Sep-1999
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
biepitaxial LSMO film; grain boundary junction; CMR; spin-polarization
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.35, no.5, pp.2871 - 2873
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
35
Number
5
Start Page
2871
End Page
2873
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/16822
DOI
10.1109/20.801009
ISSN
0018-9464
Abstract
La0.8Sr0.2MnO3-delta (LSMO) films with 45(0) in-plane grain boundaries were fabricated using two types of biepitaxial multilayers. The low field MR (magnetoresistance) ratio of 32% at 77 K is significant value due to the artificial grain boundary effect and it maybe useful for developing spin-dependent tunneling junctions using a LSMO biepitaxial grain boundary. The magnetoresistive properties at two different magnetic fields, parallel or perpendicular to the grain boundary junction, can be interpreted by the different ferromagnetic spin-polarization ordering in ab-plane.
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