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Inkjet-Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate-Tunable Diodesopen access

Authors
Kim, Bongjun
Issue Date
Jan-2020
Publisher
WILEY
Keywords
anti-ambipolar transistors; carbon nanotubes; indium oxide; inkjet printing; negative transconductance; printed p-n heterojunctions
Citation
ADVANCED ELECTRONIC MATERIALS, v.6, no.1
Journal Title
ADVANCED ELECTRONIC MATERIALS
Volume
6
Number
1
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/2551
DOI
10.1002/aelm.201901068
ISSN
2199-160X
Abstract
van der Waals heterojunctions composed of dissimilar materials enable fabrication of gate-tunable diodes showing negative transconductance characteristics. Such devices show great potential for implementation of multi-valued logic circuits. In order to integrate such circuits, p-n heterojunctions should be reliably created by using scalable and cost-effective methods. Gate-tunable diodes made of p-n heterojunctions are constructed from the hybrid material combination of inkjet-printed indium oxide and single-walled carbon nanotubes. Inkjet printing of p-n heterojunctions in which semiconductors are partially overlapped is enabled by modification of surface conditions using plasma treatment. The resulting devices, whose p-n junctions as well as electrodes are solely formed by inkjet printing, exhibit anti-ambipolar behavior with negative transconductance. Forward currents of these devices can be modulated by varying the gate bias.
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ICT융합공학부 (전자공학전공)
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