Inkjet-Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate-Tunable Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Bongjun | - |
dc.date.available | 2021-02-22T05:35:47Z | - |
dc.date.issued | 2020-01 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/2551 | - |
dc.description.abstract | van der Waals heterojunctions composed of dissimilar materials enable fabrication of gate-tunable diodes showing negative transconductance characteristics. Such devices show great potential for implementation of multi-valued logic circuits. In order to integrate such circuits, p-n heterojunctions should be reliably created by using scalable and cost-effective methods. Gate-tunable diodes made of p-n heterojunctions are constructed from the hybrid material combination of inkjet-printed indium oxide and single-walled carbon nanotubes. Inkjet printing of p-n heterojunctions in which semiconductors are partially overlapped is enabled by modification of surface conditions using plasma treatment. The resulting devices, whose p-n junctions as well as electrodes are solely formed by inkjet printing, exhibit anti-ambipolar behavior with negative transconductance. Forward currents of these devices can be modulated by varying the gate bias. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | WILEY | - |
dc.title | Inkjet-Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate-Tunable Diodes | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1002/aelm.201901068 | - |
dc.identifier.scopusid | 2-s2.0-85075447810 | - |
dc.identifier.wosid | 000497592600001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.6, no.1 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 1 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MULTIPLE-VALUED LOGIC | - |
dc.subject.keywordPlus | P-N HETEROJUNCTIONS | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | HYBRID | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | anti-ambipolar transistors | - |
dc.subject.keywordAuthor | carbon nanotubes | - |
dc.subject.keywordAuthor | indium oxide | - |
dc.subject.keywordAuthor | inkjet printing | - |
dc.subject.keywordAuthor | negative transconductance | - |
dc.subject.keywordAuthor | printed p-n heterojunctions | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201901068 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Sookmyung Women's University. Cheongpa-ro 47-gil 100 (Cheongpa-dong 2ga), Yongsan-gu, Seoul, 04310, Korea02-710-9127
Copyright©Sookmyung Women's University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.