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Inkjet-Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate-Tunable Diodes

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dc.contributor.authorKim, Bongjun-
dc.date.available2021-02-22T05:35:47Z-
dc.date.issued2020-01-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/2551-
dc.description.abstractvan der Waals heterojunctions composed of dissimilar materials enable fabrication of gate-tunable diodes showing negative transconductance characteristics. Such devices show great potential for implementation of multi-valued logic circuits. In order to integrate such circuits, p-n heterojunctions should be reliably created by using scalable and cost-effective methods. Gate-tunable diodes made of p-n heterojunctions are constructed from the hybrid material combination of inkjet-printed indium oxide and single-walled carbon nanotubes. Inkjet printing of p-n heterojunctions in which semiconductors are partially overlapped is enabled by modification of surface conditions using plasma treatment. The resulting devices, whose p-n junctions as well as electrodes are solely formed by inkjet printing, exhibit anti-ambipolar behavior with negative transconductance. Forward currents of these devices can be modulated by varying the gate bias.-
dc.language영어-
dc.language.isoENG-
dc.publisherWILEY-
dc.titleInkjet-Printed Indium Oxide/Carbon Nanotube Heterojunctions for Gate-Tunable Diodes-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1002/aelm.201901068-
dc.identifier.scopusid2-s2.0-85075447810-
dc.identifier.wosid000497592600001-
dc.identifier.bibliographicCitationADVANCED ELECTRONIC MATERIALS, v.6, no.1-
dc.citation.titleADVANCED ELECTRONIC MATERIALS-
dc.citation.volume6-
dc.citation.number1-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMULTIPLE-VALUED LOGIC-
dc.subject.keywordPlusP-N HETEROJUNCTIONS-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusHYBRID-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordAuthoranti-ambipolar transistors-
dc.subject.keywordAuthorcarbon nanotubes-
dc.subject.keywordAuthorindium oxide-
dc.subject.keywordAuthorinkjet printing-
dc.subject.keywordAuthornegative transconductance-
dc.subject.keywordAuthorprinted p-n heterojunctions-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201901068-
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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