Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides
- Authors
- Cai, Hui; Soignard, Emmanuel; Ataca, Can; Chen, Bin; Ko, Changhyun; Aoki, Toshihiro; Pant, Anupum; Meng, Xiuqing; Yang, Shengxue; Grossman, Jeffrey; Ogletree, Frank D.; Tongay, Sefaattin
- Issue Date
- Jun-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- 2D materials; band engineering; van der Waals epitaxy
- Citation
- ADVANCED MATERIALS, v.28, no.34, pp 7375 - 7382
- Pages
- 8
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 34
- Start Page
- 7375
- End Page
- 7382
- ISSN
- 0935-9648
1521-4095
- Abstract
- [No Abstract Available]
- Files in This Item
- Go to Link
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Ko, Chang Hyun
- 첨단소재·전자융합공학부 (신소재물리전공)