Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
- Lee, Tae Yoon; Lee, Kyoungjun; Lim, Hong Heon; Song, Myeong Seop; Yang, Sang Mo; Yoo, Hyang Keun; Suh, Dong Ik; Zhu, Zhongwei; Yoon, Alexander; MacDonald, Matthew R.; Lei, Xinjian; Jeong, Hu Young; Lee, Donghoon; Park, Kunwoo; Park, Jungwon; Chae, Seung Chul
- Issue Date
- AMER CHEMICAL SOC
- ferroelectricity; HfO2; FeRAM; defects; thin films; domain switching
- ACS APPLIED MATERIALS & INTERFACES, v.11, no.3, pp.3142 - 3149
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
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- The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder.
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- ICT융합공학부 > 응용물리전공 > 1. Journal Articles
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