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Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

Authors
Lee, Tae YoonLee, KyoungjunLim, Hong HeonSong, Myeong SeopYang, Sang MoYoo, Hyang KeunSuh, Dong IkZhu, ZhongweiYoon, AlexanderMacDonald, Matthew R.Lei, XinjianJeong, Hu YoungLee, DonghoonPark, KunwooPark, JungwonChae, Seung Chul
Issue Date
Jan-2019
Publisher
AMER CHEMICAL SOC
Keywords
ferroelectricity; HfO2; FeRAM; defects; thin films; domain switching
Citation
ACS APPLIED MATERIALS & INTERFACES, v.11, no.3, pp.3142 - 3149
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
11
Number
3
Start Page
3142
End Page
3149
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/3880
DOI
10.1021/acsami.8b11681
ISSN
1944-8244
Abstract
The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder.
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