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Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

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DC FieldValueLanguage
dc.contributor.authorKim, Joonggyu-
dc.contributor.authorNa, Junhong-
dc.contributor.authorJoo, Min-Kyu-
dc.contributor.authorSuh, Dongseok-
dc.date.available2021-02-22T06:46:17Z-
dc.date.created2020-08-07-
dc.date.issued2019-01-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/3882-
dc.description.abstractThe advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available grapheneon-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.titleLow-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating-
dc.typeArticle-
dc.contributor.affiliatedAuthorJoo, Min-Kyu-
dc.identifier.doi10.1021/acsami.8b17869-
dc.identifier.scopusid2-s2.0-85060841205-
dc.identifier.wosid000457816900062-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.11, no.4, pp.4226 - 4232-
dc.relation.isPartOfACS APPLIED MATERIALS & INTERFACES-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume11-
dc.citation.number4-
dc.citation.startPage4226-
dc.citation.endPage4232-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusCURRENT SATURATION-
dc.subject.keywordPlusINTERNET-
dc.subject.keywordPlusTHINGS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusCHALLENGES-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusFUTURE-
dc.subject.keywordPlusFILM-
dc.subject.keywordAuthormagnetic Hall sensor-
dc.subject.keywordAuthorlow-voltage operation-
dc.subject.keywordAuthorionic gating-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorHall element array-
dc.identifier.urlhttps://pubs.acs.org/doi/10.1021/acsami.8b17869-
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