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Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

Authors
Lee, K.Lee, T. Y.Yang, S. M.Lee, D. H.Park, J.Chae, S. C.
Issue Date
May-2018
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.112, no.20
Journal Title
APPLIED PHYSICS LETTERS
Volume
112
Number
20
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/4530
DOI
10.1063/1.5020688
ISSN
0003-6951
Abstract
We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures. Published by AIP Publishing.
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