Room-Temperature Atomic Structure and Lattice Instability of In Nanowires on Si(111)
- Authors
- Chang, Yun Hee; Lee, Geunseop; Kim, Hanchul
- Issue Date
- Feb-2018
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Indium nanowire; Si(111) surface; Lattice instability; Phonon dispersion; Structural phase transition
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.3, pp 372 - 378
- Pages
- 7
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 72
- Number
- 3
- Start Page
- 372
- End Page
- 378
- URI
- https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/4711
- DOI
- 10.3938/jkps.72.372
- ISSN
- 0374-4884
1976-8524
- Abstract
- One-dimensional indium chains on Si(111) exhibit both temperature-and defect-induced perioddoubling (x2) structural transitions, and their natures have been focus of recent investigations. Using density functional perturbation theory calculations, we examined the vibrational properties of the room-temperature Si(111)In-4x1 structure. The phonon band structure revealed two unstable modes at the zone-boundary in the chain direction, which lead to a lattice instability towards a structure with parallel trimers. This lattice-instability-driven 4 x 2 structure is different from the low-temperature 4x2 (LT-4x2) structure (hexagon structure). The result suggests that the roomtemperature phase is neither a static 4x1 phase nor the dynamical fluctuation of the LT-4x2 phase. We demonstrate that the room-temperature phase is a dynamically fluctuating parallel-trimer 4x2 phase, and the fluctuations become suppressed near the defects to result in the defect-induced x2 structure.
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