Ni 나노입자의 배열을 이용한 다중벽 탄소나노튜브의 제어된 성장

Abstract

We have investigated the optimal growth conditions of carbon nanotubes (CNTs) using the chemical vapor deposition and the Ni nanoparticle arrays. The diameter of the CNT is shown to be controlled down to below 20 nm by changing the size of Ni particle. The position and size of Ni particles are controlled continuously by using wafer-scale compatible methods such as lithography, ion-milling, and chemical etching. Using optimal growth conditions of temperature, carbon feedstock, and carrier gases, we have demonstrated that an individual CNT can be grown from each Ni nanoparticle with almost 100% probability over wide area of SiO2/Si wafer. The position, diameter, and wall thickness of the CNT are shown to be controlled by adjusting the growth conditions.