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Ni 나노입자의 배열을 이용한 다중벽 탄소나노튜브의 제어된 성장Controlled Growth of Multi-walled Carbon NanotubesUsing Arrays of Ni Nanoparticles

Other Titles
Controlled Growth of Multi-walled Carbon NanotubesUsing Arrays of Ni Nanoparticles
Authors
지승묵이태진방재호홍영규김한철하동한김창수구자용
Issue Date
Sep-2008
Publisher
한국진공학회
Keywords
Carbon nanotube; Controlled growth; Nanoparticle; Chemical vapor deposition.; 탄소나노튜브; 제어된 성장; 나노입자; 화학기상증착
Citation
한국진공학회지, v.17, no.5, pp 473 - 480
Pages
8
Journal Title
한국진공학회지
Volume
17
Number
5
Start Page
473
End Page
480
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/7835
DOI
10.5757/JKVS.2008.17.5.473
ISSN
1225-8822
Abstract
We have investigated the optimal growth conditions of carbon nanotubes (CNTs) using the chemical vapor deposition and the Ni nanoparticle arrays. The diameter of the CNT is shown to be controlled down to below 20 nm by changing the size of Ni particle. The position and size of Ni particles are controlled continuously by using wafer-scale compatible methods such as lithography, ion-milling, and chemical etching. Using optimal growth conditions of temperature, carbon feedstock, and carrier gases, we have demonstrated that an individual CNT can be grown from each Ni nanoparticle with almost 100% probability over wide area of SiO2/Si wafer. The position, diameter, and wall thickness of the CNT are shown to be controlled by adjusting the growth conditions.
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첨단소재·전자융합공학부 (신소재물리전공)
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