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Pattern evolution during ion beam sputtering; reductionistic view

Authors
김재성김지현
Issue Date
Sep-2016
Publisher
ELSEVIER SCIENCE BV
Keywords
Ion beam sputtering; Nano patterning; Growth kinetics
Citation
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, v.383, no. , pp.59 - 64
Journal Title
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume
383
Start Page
59
End Page
64
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/9413
DOI
10.1016/j.nimb.2016.06.005
ISSN
0168-583X
Abstract
The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley–Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.
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