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A 65-nm 0.6-fJ/Bit/Search Ternary Content Addressable Memory Using an Adaptive Match-Line Discharge

Authors
Lee, KyeonghoChoi, WoongPark, Jongsun
Issue Date
Aug-2021
Publisher
IEEE
Keywords
Adaptive sensing; Boosting; Computer architecture; content addressable memory (CAM); Discharges (electric); memory; Microprocessors; Power demand; reference voltage; sensing margin; Sensors; Switches; ternary CAM (TCAM).
Citation
IEEE Journal of Solid-State Circuits, v.56, no.8, pp 2574 - 2584
Pages
11
Journal Title
IEEE Journal of Solid-State Circuits
Volume
56
Number
8
Start Page
2574
End Page
2584
URI
https://scholarworks.sookmyung.ac.kr/handle/2020.sw.sookmyung/990
DOI
10.1109/JSSC.2020.3043186
ISSN
0018-9200
1558-173X
Abstract
This article presents an adaptive match-line (ML) discharge scheme for low-power, high-performance, and compact ternary content addressable memory (TCAM). In the proposed TCAM, the transposed cell topology enables the selectively controlled ML pull-down path and compact array area. By employing the adaptive ML discharge and ML boosting scheme, unnecessary ML discharge and redundant search-line (SL) switching are eliminated for low-cost TCAM search operation. In order to minimize ML voltage swing at a wide voltage range, a timing calibration scheme is also adopted in the proposed TCAM. A 128 x 64 test chip implemented with 65-nm CMOS technology shows that the proposed adaptive ML discharge improves up to 69% of search delay and saves 37% of search energy compared with the conventional approach at 1.1 V, 100 MHz. The measurement result shows energy efficiency of 0.6 fJ/bit/search and 8% improvement of figure-of-merit (FoM) (energy/bit/search) compared with the state-of-the-art works. IEEE
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첨단소재·전자융합공학부 (지능형전자시스템전공)
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