Interaction and ordering of vacancy defects in NiO

  • Sohee Park
  • Hyo-Shin Ahn
  • Choong-Ki Lee
  • Hanchul Ckim
  • Hosub Jin
  • 외 3명
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초록

By using a first-principles method employing the local density approximation plus Hubbard parameter approach, we study point defects in NiO and interactions between them. The defect states associated with nickel or oxygen vacancies are identified within the energy gap. It is found that nickel vacancies introduce shallow levels in the density of states for the spin direction opposite to that of the removed Ni atom, while the oxygen vacancy creates more localized in-gap states. The interaction profiles between vacancies indicate that specific defect arrangements are strongly favored for both nickel and oxygen vacancies. In the case of nickel vacancies, defect ordering in a simple-cubic style is found to be most stable, leading to a half-metallic behavior. The ionized oxygen vacancies also show a tendency toward clustering, more strongly than neutral pairs. The microscopic origin of vacancy clustering is understood based on overlap integrals between defect states

키워드

INITIO MOLECULAR-DYNAMICSELECTRONIC-STRUCTUREAB-INITIOOPTICAL-PROPERTIESBAND THEORYTRANSITIONEXCHANGESTM
제목
Interaction and ordering of vacancy defects in NiO
저자
Sohee ParkHyo-Shin AhnChoong-Ki LeeHanchul CkimHosub JinHyo-Sug LeeSunae SeoSeungwu Han
DOI
10.1103/PhysRevB.77.134103
발행일
2008-04
저널명
Physical Review B - Condensed Matter and Materials Physics
77
13
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1 ~ 7