Controlled Synthesis of Tellurium Nanowires and Performance Optimization of Thin-Film Transistors via Percolation Network Engineering
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초록

In this study, we propose a method for systematic nanowire length control through the precise control of the polyvinylpyrrolidone (PVP) concentration during the synthesis of tellurium nanowires. Furthermore, we report the changes in the electrical properties of thin-film transistor (TFT) devices with different lengths of synthesized tellurium nanowires used as channels. Through the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM), it was determined that the length of the wires increased in relation to the amount of PVP incorporated, while the diameter remained consistent. The synthesized long wires formed a well-connected percolation network with a junction density of 4.6 junctions/mu m2, which enabled the fabrication of devices with excellent electrical properties, the highest on/off ratio of 103, and charge mobility of 1.1 cm2/V<middle dot>s. In contrast, wires with comparatively reduced PVP content demonstrated a junction density of 2.1 junctions/mu m2, exhibiting a lower on/off ratio and reduced charge mobility. These results provide guidance on how the amount of PVP added during wire growth affects the length of the synthesized wires and how it affects the connectivity between the wires when they form a network, which may help optimize the performance of high-performance nanoelectronic devices.

키워드

tellurium nanowirespolyvinylpyrrolidone concentrationthin-film transistorspercolation networkelectrical performanceONE-DIMENSIONAL NANOSTRUCTURESNANOTUBESGROWTH
제목
Controlled Synthesis of Tellurium Nanowires and Performance Optimization of Thin-Film Transistors via Percolation Network Engineering
저자
Park, MoseLyu, ZhiyiSong, Seung HyunLee, Hoo-Jeong
DOI
10.3390/nano15141128
발행일
2025-07
유형
Article
저널명
NANOMATERIALS
15
14