ScholarWorks@숙명여자대학교

초록

Inkjet printing technology holds promise as a cost-effective method for fabricating large-area electronics, with high compatibility with various substrates. In this paper, we investigate the electrical doping behaviors of p-type transistors based on single-walled carbon nanotubes (SWCNTs), where semiconducting channels and electrodes are patterned using inkjet printing. We demonstrate improved charge transport properties by encapsulating SWCNTs with phenylphosphonic acid (PPA) without annealing. The PPA-coated SWCNT transistors exhibit significantly enhanced hole mobility, reaching approximately 8.25 cm2 V-1 s-1. The presence of the benzene ring in PPA facilitates hole injection and induces a p-doping effect, resulting in a 4.3-fold increase in the on-current level of the transistors.

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