Surface etching induced by Ce silicide formation on Si(100)

초록

We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(100) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(100) surface are gradually roughened due to the formation of Cc silicide as a function of substrate temperature. Unlike the Si(111) surface, however, terrace etching also occurs in addition to step roughening at 500 degrees C. Moreover, we found that Si(1 00) dinners are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(100) surface occurs the defect-induced strain at higher temperature (similar to 600 degrees C). (C) 2007 Elsevier B.V. All rights reserved.