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Directionality of o-Phthalaldehyde adsorbed onto H-passiyated Si(100) Surface Characterized by NEXAFS and HRPES
- Kim, Ki-jeong;
- Yang, Sena;
- Kang, Tai-Hee;
- Kim, Bongsoo;
- Lee, Hangil
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The electronic and adsorption structure of o-phthalaldehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface.
키워드
o-Phthalaldehyde; H-Si(100); HRPES; NEXAFS; 1-D Organic molecular line; SILICON
- 제목
- Directionality of o-Phthalaldehyde adsorbed onto H-passiyated Si(100) Surface Characterized by NEXAFS and HRPES
- 저자
- Kim, Ki-jeong; Yang, Sena; Kang, Tai-Hee; Kim, Bongsoo; Lee, Hangil
- 발행일
- 2010-07
- 유형
- Article
- 권
- 31
- 호
- 7
- 페이지
- 1973 ~ 1975