상세 보기
- Cho, Deok-Yong;
- Song, Jaewon;
- Hwang, Cheol Seong;
- Choi, Woo Seok;
- Noh, T.W.;
- ... Lee, H.-G.;
- 외 7명
WEB OF SCIENCE
30SCOPUS
33초록
The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.
키워드
- 제목
- Electronic Structure of amorphous InGaO3(ZnO)0.5 Thin Films
- 저자
- Cho, Deok-Yong; Song, Jaewon; Hwang, Cheol Seong; Choi, Woo Seok; Noh, T.W.; Kim, J.-Y.; Lee, H.-G.; Park, B.-G.; Cho, S.-Y.; Oh, S.-J.; Jeong, Jong Han; Jeong, Jae Kyeong; Mo, Yeon-Gon
- 발행일
- 2009-12
- 저널명
- Thin Solid Films
- 권
- 518
- 호
- 4
- 페이지
- 1079 ~ 1081