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Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers
- Chun, B. S.;
- Kim, Y. K.;
- Hwang, J. Y.;
- Yim, H. I.;
- Rhee, J. R.;
- 외 1명
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3초록
Magnetic tunnel junctions ( MTJs), which consisted of amorphous ferromagnetic Ni16Fe62Si8B14 free layers, were investigated. NiFeSiB has a lower saturation magnetization ( M-s: 800 emu/ cm(3)) than Co90Fe10 and a higher anisotropy constant ( K-u: 2700 erg/ cm 3) than Ni80Fe20. By increasing the free layer thickness, the tunnel magnetoresistance ( TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field ( H-sw) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer ( 1 nm) at the tunnel barrier/ NiFeSiB interface, the TMR ratio and switching squareness were enhanced. (c) 2006 Elsevier B. V. All rights reserved.
키워드
magnetic tunnel junctions; amorphous magnetic material; tunneling magnetoresistance; switching field; sensitivity; ROOM-TEMPERATURE; MAGNETORESISTANCE; ARRAYS
- 제목
- Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers
- 저자
- Chun, B. S.; Kim, Y. K.; Hwang, J. Y.; Yim, H. I.; Rhee, J. R.; Kim, T. W.
- 발행일
- 2007-03
- 유형
- Article
- 권
- 310
- 호
- 2
- 페이지
- 1929 ~ 1931
- 언어
- ENG
- 출판사
- ELSEVIER
- 발행국가
- 네덜란드
- 분량
- 3 페이지
- ISSN
- E 1873-4766
P 0304-8853