ScholarWorks@숙명여자대학교

초록

Two-dimensional (2D) van der Waals (vdW) multilayers and their heterostructures are promising alternatives to silicon-based semiconductors due to their chemically inert surfaces, absence of dangling bonds, and tunable band gaps with moiré exciton dynamics. However, understanding in-plane and out-of-plane current flow and thickness-dependent conductivity relies on electrostatic drain/gate bias conditions, contact resistance, and dielectric materials, which offer numerous optimization parameters but complicate analysis. To gain deeper insights into carrier transport mechanisms, we performed numerical simulations using Thomas−Fermi charge screening theory and a ladder resistive equivalent model. We found that contact and interlayer resistance significantly influence current distribution across the layers, and electrostatic gate voltage governs conducting channel migration by shifting the most conductive channel. Our findings provide crucial guidelines for effective channel optimization, essential for enhancing device performance in 2D vdW multilayer platforms.

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