Enhanced ferroelectricity in perovskite oxysulfides
  • Sheeraz, Muhammad
  • Kim, Hye Jung
  • Kim, Kyou-Hyun
  • Bae, Jong-Seong
  • Kim, Ah Young
  • 외 18명
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초록

A sulfur element is a promising anion dopant for synthesizing new multifunctional materials and for exploring unusual physical phenomena. However, owing to its volatility, sulfur substitution to oxide materials is challenging, and thus the sulfurization effects on the associated properties have been limitedly studied. Here, a facile method for sulfurization to a perovskite oxide Pb(Zr,Ti)O3 is developed and demonstrated. A thiourea (CH4N2S) solution is used as a precursor for the sulfurization and its doping-level control. By manipulating the sulfur concentration (x), we systematically examine the physical properties of sulfur-doped Pb(Zr,Ti)O3-xSx films. An enhancement in the tetragonality and ferroelectricity by sulfurization is observed with the band-gap reduction, which is consistent with our theoretical predictions. In the sulfurized films, the ferroelectric phonon modes become softened progressively, probably due to the substitution of apical oxygens with sulfur atoms. Our work is of practical interest for designing ferroelectric photovoltaic devices with high performances. © 2019 American Physical Society.

키워드

Energy gapFerroelectric filmsPerovskiteSemiconductor dopingAnion dopantsBand gap reductionMulti-functional materialsOxide materialsPerovskite oxidesPhotovoltaic devicesPhysical phenomenaSulfur concentrationsFerroelectricity
제목
Enhanced ferroelectricity in perovskite oxysulfides
저자
Sheeraz, MuhammadKim, Hye JungKim, Kyou-HyunBae, Jong-SeongKim, Ah YoungKang, ManilLee, JongminSong, JaesunKhaliq, AbdulKim, JinkwonCho, Byeong-GwanJoe, Sung-YoonJung, Jong HoonKo, Jae-HyeonKoo, Tae YeongNoh, Tae WonCho, ShinukLee, SanghanYang, Sang MoShin, Young-HanKim, Ill WonAhn, Chang WonKim, Tae Heon
DOI
10.1103/PhysRevMaterials.3.084405
발행일
2019-08
유형
Article
저널명
Physical Review Materials
3
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