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Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-based Transistors
- Kim, Somi;
- Jung, Seoyeon;
- Kim, Bongjun;
- Yoo, Hocheon
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11초록
This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress. IEEE
키워드
Behavioral sciences; Field effect transistors; Ink jet printing; inkjet printing; inverter circuit; logic-in-memory; multi-valued logic; Stress; Substrates; thin-film transistors; Transient analysis; Transmission line measurements
- 제목
- Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-based Transistors
- 저자
- Kim, Somi; Jung, Seoyeon; Kim, Bongjun; Yoo, Hocheon
- 발행일
- 2023-02
- 유형
- Article
- 권
- 44
- 호
- 2
- 페이지
- 265 ~ 268