Ambipolar Thin-Film Transistors Based on Low-Dimensional Semiconductor Heterostructures
  • Baek, Sujin
  • Kim, Suhyeon
  • Lee, Hye young
  • Pyo, Jinhyeok
  • Pak, Sangyeon
  • ... Kim, Bongjun
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초록

We present ambipolar thin-film transistors (TFTs) based on bilayers of monolayer MoS2 and an inkjet-printed single-walled carbon nanotube (SWCNT) network. The current level in p-branch is tuned by varying the width of printed SWCNT channels. Furthermore, a complementary-like inverter is implemented using two bilayer ambipolar TFTs interconnected by printed Ag electrodes.

키워드

ambipolar inverterambipolar transistorcarbon nanotubesMoS2
제목
Ambipolar Thin-Film Transistors Based on Low-Dimensional Semiconductor Heterostructures
저자
Baek, SujinKim, SuhyeonLee, Hye youngPyo, JinhyeokPak, SangyeonKim, Bongjun
DOI
10.1109/ICCE-Asia67487.2025.11263688
발행일
2025-10
유형
Conference paper
저널명
2025 IEEE/IEIE International Conference on Consumer Electronics-Asia (ICCE-Asia)