Ambipolar Thin-Film Transistors Based on Low-Dimensional Semiconductor Heterostructures

Baek, Sujin; Kim, Suhyeon; Lee, Hye young; Pyo, Jinhyeok; Pak, Sangyeon; Kim, Bongjun

doi:10.1109/ICCE-Asia67487.2025.11263688

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Ambipolar Thin-Film Transistors Based on Low-Dimensional Semiconductor Heterostructures

Baek, Sujin;
Kim, Suhyeon;
Lee, Hye young;
Pyo, Jinhyeok;
Pak, Sangyeon;
... Kim, Bongjun

Citations

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초록

We present ambipolar thin-film transistors (TFTs) based on bilayers of monolayer MoS2 and an inkjet-printed single-walled carbon nanotube (SWCNT) network. The current level in p-branch is tuned by varying the width of printed SWCNT channels. Furthermore, a complementary-like inverter is implemented using two bilayer ambipolar TFTs interconnected by printed Ag electrodes.

키워드

ambipolar inverter; ambipolar transistor; carbon nanotubes; MoS2

제목: Ambipolar Thin-Film Transistors Based on Low-Dimensional Semiconductor Heterostructures

저자: Baek, Sujin; Kim, Suhyeon; Lee, Hye young; Pyo, Jinhyeok; Pak, Sangyeon; Kim, Bongjun

DOI: 10.1109/ICCE-Asia67487.2025.11263688

발행일: 2025-10

유형: Conference paper

저널명: 2025 IEEE/IEIE International Conference on Consumer Electronics-Asia (ICCE-Asia)

언어: ENG

출판사: Institute of Electrical and Electronics Engineers Inc.

발행국가: 미국

ISSN: E 3066-1412
P 3066-1404