Adsorption of H atoms on a Si(111)4×1-In surface

초록

Using scanning tunneling microscopy (STM) measurements and ab-initio calculations, we studied the adsorption of hydrogen on a Si(111)4 x 1-In surface at room temperature. The H atom is found to adsorb at the bridge site between the In chain and the Si Seiwatz chain and to break an In-Si bond to form a Si-H bond. Experimentally, the adsorption of H is influenced by the subsurface structure, and the H preferentially occupies one of the two zigzag In subchains. The adsorbed H atom not only induces a localized lattice distortion but also perturbs the distant region, resulting in period-doubling modulations in the STM images. This H-induced perturbation is different from the Na-induced perturbation on the same 4 x 1-In surface.

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