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Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction
- Hwang, J. Y.;
- Lee, S. Y;
- Lee, N. I.;
- Yim, H. I.;
- Kim, M. Y.;
- 외 8명
WEB OF SCIENCE
3SCOPUS
3초록
The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.
키워드
- 제목
- Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction
- 저자
- Hwang, J. Y.; Lee, S. Y; Lee, N. I.; Yim, H. I.; Kim, M. Y.; Lee, W. C.; Rhee, J. R.; Chun, B. S.; Kim, T. W.; Kim, Y. K.; Lee, S. S.; Hwang, D. G.; Ri, E. J.
- 발행일
- 2009-06
- 유형
- Article; Proceedings Paper
- 권
- 45
- 호
- 6
- 페이지
- 2396 ~ 2398
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1941-0069
P 0018-9464