Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates
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초록

The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an “active,” reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors.

키워드

DIOXIDE THIN-FILMSVANADIUM DIOXIDEDIRECT BANDGAPMOS2GENERATIONRAMANHETEROSTRUCTURESSEMICONDUCTORSPHOTOCURRENTORGANIZATION
제목
Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates
저자
Hou, JiweiWang, XiFu, DeyiKo, ChanghyunChen, YabinSun, YufeiLee, SangwookWang, Kevin X.Dong, KaichenSun, YinghuiTongay, SefaattinJiao, LiyingYao, JieLiu, KaiWu, Junqiao
DOI
10.1002/smll.201601021
발행일
2016-06
유형
Article
저널명
Small
12
29
페이지
3976 ~ 3984