Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Ko, Changhyun; Lee, Yeonbae; Chen, Yabin; Suh, Joonki; Fu, Deyi; Suslu, Aslihan; Lee, Sangwook; Clarkson, James David; Choe, Hwan Sung; Tongay, Sefaatin; Ramesh, Ramamoorthy; Wu, Junqiao

doi:10.1002/adma.201504779

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Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Ko, Changhyun;
Lee, Yeonbae;
Chen, Yabin;
Suh, Joonki;
Fu, Deyi;
외 7명

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WEB OF SCIENCE

177

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SCOPUS

177

초록

[No Abstract Available]

키워드

2D materials; ferroelectrics; field-effect transistors; nonvolatile memory; transition-metal dichalcogenides; FIELD-EFFECT TRANSISTORS; FEW-LAYER MOS2; MOLYBDENUM-DISULFIDE; HETEROSTRUCTURES; FILMS; POLARIZATION; NANOSHEET; WS2; MODULATION; GRAPHENE

제목: Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

저자: Ko, Changhyun; Lee, Yeonbae; Chen, Yabin; Suh, Joonki; Fu, Deyi; Suslu, Aslihan; Lee, Sangwook; Clarkson, James David; Choe, Hwan Sung; Tongay, Sefaatin; Ramesh, Ramamoorthy; Wu, Junqiao

DOI: 10.1002/adma.201504779

발행일: 2016-02

유형: Article

저널명: Advanced Materials

권: 28

호: 15

페이지: 2923 ~ 2930

언어: ENG

출판사: WILEY-V C H VERLAG GMBH

발행국가: 독일

분량: 8 페이지

ISSN: E 1521-4095
P 0935-9648