Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection
  • Najmzadeh, Mohammad
  • Ko, Changhyun
  • Wu, Kedi
  • Tongay, Sefaattin
  • Wu, Junqiao
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초록

In this paper, a multilayer ReS2 p–n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p–n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41 A/W responsivity under illumination by a 660 nm red laser.

키워드

LAYER MOS2MONOLAYERDIODES
제목
Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection
저자
Najmzadeh, MohammadKo, ChanghyunWu, KediTongay, SefaattinWu, Junqiao
DOI
10.7567/APEX.9.055201
발행일
2016-05
유형
Article
저널명
Applied Physics Express
9
5