Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

Cai, Hui; Soignard, Emmanuel; Ataca, Can; Chen, Bin; Ko, Changhyun; Aoki, Toshihiro; Pant, Anupum; Meng, Xiuqing; Yang, Shengxue; Grossman, Jeffrey; Ogletree, Frank D.; Tongay, Sefaattin

doi:10.1002/adma.201601184

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Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

Cai, Hui;
Soignard, Emmanuel;
Ataca, Can;
Chen, Bin;
Ko, Changhyun;
외 7명

Citations

WEB OF SCIENCE

31

Citations

SCOPUS

32

초록

[No Abstract Available]

키워드

2D materials; band engineering; van der Waals epitaxy; DER-WAALS EPITAXY; VAPOR-PHASE GROWTH; VAN; STRAIN; GAP; CRYSTALLINE; MONOLAYER; LAYERS; FILMS; PHOTODETECTORS

제목: Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

저자: Cai, Hui; Soignard, Emmanuel; Ataca, Can; Chen, Bin; Ko, Changhyun; Aoki, Toshihiro; Pant, Anupum; Meng, Xiuqing; Yang, Shengxue; Grossman, Jeffrey; Ogletree, Frank D.; Tongay, Sefaattin

DOI: 10.1002/adma.201601184

발행일: 2016-06

유형: Article

저널명: Advanced Materials

권: 28

호: 34

페이지: 7375 ~ 7382

언어: ENG

출판사: WILEY-V C H VERLAG GMBH

발행국가: 독일

분량: 8 페이지

ISSN: E 1521-4095
P 0935-9648