ScholarWorks@숙명여자대학교

초록

Van der Waals (vdW) heterostructures, artificial stacks of two-dimensional materials, present an exciting platform to explore new physical phenomena and unique applications. An important and increasingly recognized factor limiting the electrical and optical performance of heterostructure samples is the presence of interfacial contamination. In published work reporting various heterostructure fabrication methods, evidence for the cleanliness of samples is often presented as optical and atomic force microscopy images, typically exhibiting a completely flat topography. In this work, we demonstrate that such samples may nonetheless contain a uniformly thin layer of contaminants at the heterostructure interface. As alternatives, we propose two robust visualization methods that are highly sensitive to such residues, based on photoluminescence mapping and on selective solvent diffusion. The detection capability and straightforward implementation of these two imaging techniques make them powerful tools to assess and improve the cleanliness of a wide variety of fabrication techniques for heterostructures comprising any combination of vdW materials.

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