상세 보기
- Yim, H. I.;
- Lee, S. Y.;
- Hwang, J. Y.;
- Rhee, J. R.;
- Chun, B. S.;
- 외 5명
WEB OF SCIENCE
0SCOPUS
0초록
Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx /free layer 10/AlOx /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and –0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
키워드
- 제목
- Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers
- 저자
- Yim, H. I.; Lee, S. Y.; Hwang, J. Y.; Rhee, J. R.; Chun, B. S.; Wang, K. L.; Kim, Y. K.; Kim, T. W.; Lee, S. S.; Hwang, D. G.
- 발행일
- 2008-08
- 유형
- Article; Proceedings Paper
- 권
- 205
- 호
- 8
- 페이지
- 1847 ~ 1850