ScholarWorks@숙명여자대학교

초록

van der Waals heterojunctions composed of dissimilar materials enable fabrication of gate-tunable diodes showing negative transconductance characteristics. Such devices show great potential for implementation of multi-valued logic circuits. In order to integrate such circuits, p-n heterojunctions should be reliably created by using scalable and cost-effective methods. Gate-tunable diodes made of p-n heterojunctions are constructed from the hybrid material combination of inkjet-printed indium oxide and single-walled carbon nanotubes. Inkjet printing of p-n heterojunctions in which semiconductors are partially overlapped is enabled by modification of surface conditions using plasma treatment. The resulting devices, whose p-n junctions as well as electrodes are solely formed by inkjet printing, exhibit anti-ambipolar behavior with negative transconductance. Forward currents of these devices can be modulated by varying the gate bias.

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