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Electron doping limit in Al-doped ZnO by donor-acceptor interactions
- Noh, Ji-Young;
- Kim, Hanchul;
- Kim, Yong-Sung;
- Park, C. H.
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48초록
We investigate the maximum available free electron carrier density in Al-doped n-type ZnO, based on density-functional theory calculations. The Coulomb interactions between the Al dopants and the Zn-vacancy native acceptors are found to limit the carrier density. In typical growth conditions, the n-type doping limit is found to be in the range of 10(19) similar to 10(21) cm(-3). (C) 2013 AIP Publishing LLC
키워드
TOTAL-ENERGY CALCULATIONS; FILMS; DEFECTS; GA; TEMPERATURE; RESISTIVITY
- 제목
- Electron doping limit in Al-doped ZnO by donor-acceptor interactions
- 저자
- Noh, Ji-Young; Kim, Hanchul; Kim, Yong-Sung; Park, C. H.
- 발행일
- 2013-04
- 유형
- Article
- 권
- 113
- 호
- 15
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1089-7550
P 0021-8979