p-Type Doping of Epitaxial Graphene by p-tert-Butylcalix[4]arene

Park, Sunmin; Yang, Sena; Kim, Ki-jeong; No, Kwanghyun; Lee, Hangil

doi:10.5012/bkcs.2010.31.10.2809

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p-Type Doping of Epitaxial Graphene by p-tert-Butylcalix[4]arene

Park, Sunmin;
Yang, Sena;
Kim, Ki-jeong;
No, Kwanghyun;
Lee, Hangil

Citations

WEB OF SCIENCE

6

Citations

SCOPUS

8

초록

The Chemical Doping of epitaxial graphene (EG) due to p-tert-butylcalix[4]arene was investigated using high resolution photoemission spectroscopy (HRPES). The measured work function changes verified that increased adsorption of the p-tert-butylcalix[4]arene on EG showed p-type doping characteristics due to charge transfer from the graphene to the p-tert-butylcalix[4]arene through the hydroxyl group. A single oxygen bonding feature associated with the O 1s peak was clearly observed in the core-level spectra, indicating the presence of one equivalent adsorption state.

키워드

p-tert-Butylcalix[4]arene; Chemical doping; Epitaxial graphene; HRPES; ELECTRONIC-STRUCTURE; CARBON NANOTUBES; INTERFACES; 6H-SIC(0001); MONOLAYERS; SURFACES; BANDGAP; LEVEL

제목: p-Type Doping of Epitaxial Graphene by p-tert-Butylcalix[4]arene

저자: Park, Sunmin; Yang, Sena; Kim, Ki-jeong; No, Kwanghyun; Lee, Hangil

DOI: 10.5012/bkcs.2010.31.10.2809

발행일: 2010-10

유형: Article

저널명: Bulletin of the Korean Chemical Society

권: 31

호: 10

페이지: 2809 ~ 2812

언어: ENG

출판사: KOREAN CHEMICAL SOC

발행국가: 대한민국

분량: 4 페이지

ISSN: E 1229-5949
P 0253-2964