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p-Type Doping of Epitaxial Graphene by p-tert-Butylcalix[4]arene
- Park, Sunmin;
- Yang, Sena;
- Kim, Ki-jeong;
- No, Kwanghyun;
- Lee, Hangil
Citations
WEB OF SCIENCE
6Citations
SCOPUS
8초록
The Chemical Doping of epitaxial graphene (EG) due to p-tert-butylcalix[4]arene was investigated using high resolution photoemission spectroscopy (HRPES). The measured work function changes verified that increased adsorption of the p-tert-butylcalix[4]arene on EG showed p-type doping characteristics due to charge transfer from the graphene to the p-tert-butylcalix[4]arene through the hydroxyl group. A single oxygen bonding feature associated with the O 1s peak was clearly observed in the core-level spectra, indicating the presence of one equivalent adsorption state.
키워드
p-tert-Butylcalix[4]arene; Chemical doping; Epitaxial graphene; HRPES; ELECTRONIC-STRUCTURE; CARBON NANOTUBES; INTERFACES; 6H-SIC(0001); MONOLAYERS; SURFACES; BANDGAP; LEVEL
- 제목
- p-Type Doping of Epitaxial Graphene by p-tert-Butylcalix[4]arene
- 저자
- Park, Sunmin; Yang, Sena; Kim, Ki-jeong; No, Kwanghyun; Lee, Hangil
- 발행일
- 2010-10
- 유형
- Article
- 권
- 31
- 호
- 10
- 페이지
- 2809 ~ 2812