Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption

  • Hwang, Eunkyung; 
  • Chang, Yun Hee; 
  • Kim, Yong-Sung; 
  • Koo, Ja-Yong; 
  • Kim, Hanchul
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초록

The initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O-2-induced feature. The very initial sticking coefficient of O-2 below 0.04 Langmuir is measured to be similar to 0.16. Upon thermal annealing at 250-600 A degrees C, the bright O-2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O-2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.

키워드

Silicon surface; Oxygen molecule; Precursor; Initial adsorption; Sticking Coefficient; Room temperature; SI EJECTION; OXIDATION; SI(100); STM; MECHANISMS; STICKING; BEAM; O-2; CHEMISTRY; KINETICS
제목
Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption
저자
Hwang, Eunkyung; Chang, Yun Hee; Kim, Yong-Sung; Koo, Ja-Yong; Kim, Hanchul
DOI
10.3938/jkps.61.1046
발행일
2012-10
유형
Article
저널명
Journal of the Korean Physical Society
권
61
호
7
페이지
1046 ~ 1050