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Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption
- Hwang, Eunkyung;
- Chang, Yun Hee;
- Kim, Yong-Sung;
- Koo, Ja-Yong;
- Kim, Hanchul
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WEB OF SCIENCE
2Citations
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2초록
The initial adsorption of oxygen molecules on Si(001) is investigated at room temperature. The scanning tunneling microscopy images reveal a unique bright O-2-induced feature. The very initial sticking coefficient of O-2 below 0.04 Langmuir is measured to be similar to 0.16. Upon thermal annealing at 250-600 A degrees C, the bright O-2-induced feature is destroyed, and the Si(001) surface is covered with dark depressions that seem to be oxidized structures with -Si-O-Si- bonds. This suggests that the observed bright O-2-induced feature is an intermediate precursor state that may be either a silanone species or a molecular adsorption structure.
키워드
Silicon surface; Oxygen molecule; Precursor; Initial adsorption; Sticking Coefficient; Room temperature; SI EJECTION; OXIDATION; SI(100); STM; MECHANISMS; STICKING; BEAM; O-2; CHEMISTRY; KINETICS
- 제목
- Precursor state of oxygen molecules on the Si(001) surface during the initial room-temperature adsorption
- 저자
- Hwang, Eunkyung; Chang, Yun Hee; Kim, Yong-Sung; Koo, Ja-Yong; Kim, Hanchul
- 발행일
- 2012-10
- 유형
- Article
- 권
- 61
- 호
- 7
- 페이지
- 1046 ~ 1050