A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition
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초록

Micro‐electromechanical (MEM) switches, with advantages such as quasi‐zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal‐oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳106 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO2) slightly above room temperature. The phase‐transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications.

키워드

Micro-electromechanical systemsphase transitionssub 1 V operating voltagesswitchvanadium dioxideMEMSPERFORMANCEACTUATORSCIRCUITSBIMORPHSSENSOR
제목
A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition
저자
Dong, KaichenChoe, Hwan SungWang, XiLiu, HuiliKo, Chang HyunSaha, BivasDeng, YangTom, Kyle B.Lou, ShuaiWang, LetianGrigoropoulos, Costas P.You, ZhengYao, JieWu, Junqiao
DOI
10.1002/smll.201703621
발행일
2018-04
저널명
Small
14
14