상세 보기
- Hwang, Jae Youn;
- Lee, Gae Hun;
- Song, Yun Heub;
- Yim, Hae In
WEB OF SCIENCE
1SCOPUS
1초록
A magnetic tunnel junction (MTJ) with a Co2FeAl0.5Si0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 degrees C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlOx/CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.
키워드
- 제목
- Tunnel Magnetoresistance of an As-deposited Co2FeAl0.5Si0.5-based Magnetic Tunnel Junction on a Ta/Ru Buffer Layer
- 저자
- Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In
- 발행일
- 2010-07
- 유형
- Article
- 권
- 57
- 호
- 1
- 페이지
- 160 ~ 163