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Geometry and core-level shifts of Li/GaAs(110) surface
- Hongsuk Yi;
- Sangsan Lee;
- Hanchul Kim
WEB OF SCIENCE
2SCOPUS
4초록
We have performed total-energy density-functional calculations using ab initio pseudopotentials to determine the atomic structure of Li adsorbed on a GaAs(110) surface. From the calculated adsorption energies for different adsorption configurations of Li at 0.5 monolayer coverage, we have identified the most stable geometry showing 1 × 2 periodicity. This structure is found to be stabilized by charge transfer from the adatoms to the surface Ga dangling bonds. Based on this structure, we have calculated the core-level shifts of Ga 3d and As 3d. The calculated core-level shifts are in qualitative agreement with recent photoemission spectroscopy experiments, and provide a theoretical basis for the interpretation of the multiple components of core-level shifts.
- 제목
- Geometry and core-level shifts of Li/GaAs(110) surface
- 저자
- Hongsuk Yi; Sangsan Lee; Hanchul Kim
- 발행일
- 2003-02
- 권
- 42
- 호
- III
- 페이지
- S495 ~ S498
- 언어
- ENG
- 출판사
- 한국물리학회
- 발행국가
- 대한민국
- ISSN
- E 1976-8524
P 0374-4884