Thickness-dependent carrier mobility of ambipolar MoTe2: Interplay between interface trap and Coulomb scattering

초록

The correlation between the channel thickness and the carrier mobility is investigated by conducting static and low frequency (LF) noise characterization for ambipolar carriers in multilayer MoTe2 transistors. For channel thicknesses in the range of 5-15 nm, both the low-field carrier mobility and the Coulomb-scattering-limited carrier mobility (mu(C)) are maximal at a thickness of similar to 10 nm. For LF noise, the interplay of interface trap density (N-ST), which was minimal at similar to 10 nm, and the interfacial Coulomb scattering parameter (alpha(SC)), which decreased up to 10 nm and saturated above 10 nm, explained the mobility (mu(C)) peaked near 10 nm by the carrier fluctuation and charge distribution.Published by AIP Publishing.