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초록
Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure. (C) 2006 Elsevier B.V. All rights reserved.
키워드
Magnetic tunnel junctions; Amorphous ferromagnet; NiFeSiB film
- 제목
- Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions
- 저자
- Chun, B. S.; Ko, S. P.; Oh, B. S.; Hwang, J. Y.; Rhee, J. R.; Kim, T. W.; Saito, S.; Yoshimura, S.; Tsunoda, M.; Takahashi, M.; Kim, Y. K.
- 발행일
- 2006-09
- 유형
- Article
- 권
- 304
- 호
- 1
- 페이지
- E258 ~ E260